Patent · US Active

Semiconductor fuses with nanowire fuse links and fabrication methods thereof

US9601428B2 · kind B2 · utility

1Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 25, 2015
Grant dateMar 21, 2017
Priority date
Expiry dateSep 25, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02639
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor fuses with nanowire fuse links and fabrication methods thereof are presented. The methods include, for instance: fabricating a semiconductor fuse, the semiconductor fuse including at least one nanowire fuse link, and the fabricating including: forming at least one nanowire, the at least one nanowire including a semiconductor material; and reacting the at least one nanowire with a metal to form the at least one nanowire fuse link of the semiconductor fuse, the at least one nanowire fuse link including a semiconductor-metal alloy. In another aspect, a structure is presented. The structure includes: a semiconductor fuse, the semiconductor fuse including: at least one nanowire fuse link, the at least one nanowire fuse link including a semiconductor-metal alloy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.