Method for performing deep n-typed well-correlated (DNW-correlated) antenna rule check of integrated circuit and semiconductor structure complying with DNW-correlated antenna rule
US9607123B2 · kind B2 · utility
1Cited by
20References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 16, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | May 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.