Semiconductor device manufacturing methods and methods of forming insulating material layers
US9607826B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Apr 13, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Apr 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.