Method for forming silicon oxide cap layer for solid state diffusion process
US9607837B1 · kind B1 · utility
453Cited by
647References
20Claims
0Family size
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Key dates
| Filing date | Dec 21, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting a doped silicate glass layer includes: forming a doped silicate glass layer on a substrate in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; and forming a non-doped silicate glass layer having a thickness of less than 4 nm on the doped silicate glass layer in the reaction chamber, without breaking vacuum, by plasma-enhanced atomic layer deposition (PEALD) using a second RF power, wherein the second RF power is at least twice the first RF power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.