Methods of forming metal silicides
US9607842B1 · kind B1 · utility
4Cited by
185References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Oct 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.