Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content
US9607843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a silicon containing ARC (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of a process gas to a plasma processing system, selecting a process condition that increases an etch selectivity of the silicon containing ARC layer relative to the patterned layer, igniting plasma from the process gas using a plasma source in accordance with the process condition, and exposing the substrate to the plasma to extend the feature pattern of the patterned layer into the silicon containing ARC layer. The composition of the process gas and the flow rate(s) of the gaseous constituents in the process gas are selected to adjust the carbon-fluorine content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.