Methods of forming a semiconductor circuit element and semiconductor circuit element

US9608110B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Baars · Dresden, DE
• Carsten Grass · Dresden, DE

Key dates

• Filing date: Jul 29, 2015
• Grant date: Mar 28, 2017
• Expiry date: Jul 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides methods of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element includes a first semiconductor device with a first gate structure disposed over a first active region of a semiconductor substrate and a second semiconductor device with a second gate structure disposed over a second active region of the semiconductor substrate, the first gate structure comprising a ferroelectric material buried into the first active region before a gate electrode material is formed on the ferroelectric material and the second gate structure comprising a high-k material different from the ferroelectric material.