Patent · US Active

BULEX contacts in advanced FDSOI techniques

US9608112B2 · kind B2 · utility

10Cited by

2References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Elliot John Smith · Dresden, DE
Sven Beyer · Dresden, DE
Tom Hasche · Dresden, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Aug 3, 2015
Grant date	Mar 28, 2017
Priority date	—
Expiry date	Aug 3, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides, in accordance with some illustrative embodiments, a method of forming a semiconductor device, the method including providing an SOI substrate with an active semiconductor layer disposed on a buried insulating material layer, which is in turn formed on a base substrate material, forming a gate structure on the active semiconductor layer in an active region of the SOI substrate, partially exposing the base substrate for forming at least one bulk exposed region after the gate structure is formed, and forming a contact structure for contacting the at least one bulk exposed region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.