Laser diodes with an etched facet and surface treatment
US9608407B1 · kind B1 · utility
5Cited by
29References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Oct 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/17
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.