Target shaping
US9611537B2 · kind B2 · utility
2Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2011 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Oct 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.