Photoresist strip processes for improved device integrity
US9613825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2012 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.