Method of marking a semiconductor package
US9613912B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device can include providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. A photosensitive layer can be formed over the wafer and on a backside of each of the plurality of semiconductor die within the wafer with a coating machine. An identifying mark can be formed within the photosensitive layer for each of the plurality of semiconductor die with a digital exposure machine and a developer, wherein a thickness of the identifying mark is less than or equal to 50 percent of a thickness of the photosensitive layer. The photosensitive layer can be cured. The wafer can be singulated into a plurality of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.