Patent · US Active

Semiconductor device

US9613966B2 · kind B2 · utility

1Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 28, 2015
Grant dateApr 4, 2017
Priority date
Expiry dateMay 22, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/34

Abstract

A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.