Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
US9618848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Feb 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.