Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure
US9620455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2010 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Jul 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.