Fin field effect transistor and method for fabricating the same
US9620503B1 · kind B1 · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Nov 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET including a substrate, a plurality of isolators, a gate stack, and strained material portions is provided. The substrate includes at least two fins thereon. The isolators are disposed on the substrate, and each of the insulators between the fins has a recess profile. The gate stack is disposed over portions of the fins and over the insulators. The strained material portions cover the fins revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.