Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device

US9620706B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Kangho Lee · Singapore, SG
• Chando Park · San Diego, US
• Jimmy Jianan Kan · San Diego, US
• Matthias Georg Gottwald · Leuven, BE
• Xiaochun Zhu · San Diego, US
• Seung H. Kang · San Diego, US

Key dates

• Filing date: Dec 2, 2014
• Grant date: Apr 11, 2017
• Expiry date: Dec 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.