Magnetoresistive devices and methods for manufacturing magnetoresistive devices

US9620707B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Juergen Zimmer · Neubiberg, DE
• Andreas Strasser · Graz, AT
• Wolfgang Raberg · Sauerlach, DE
• Klemens Pruegl · Regensburg, DE

Key dates

• Filing date: Apr 16, 2015
• Grant date: Apr 11, 2017
• Expiry date: Apr 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.