Patent · US Active

Double pumped memory techniques

US9627022B2 · kind B2 · utility

3Cited by

2References

33Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Andy Wangkun Chen · Austin, US
Hsin-Yu Chen · Austin, US
Sabarish Ittamveetil · Austin, US
Yew Keong Chong · Austin, US
Indranil Basu · Gadh Bengal, IN
Yew Keong Vikash · Bengaluru, IN

Key dates

Filing date	Aug 26, 2015
Grant date	Apr 18, 2017
Priority date	—
Expiry date	Aug 26, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/062
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device and method of operating a memory device are provided. The memory device comprises global control circuitry configured to receive a clock signal for the memory device and the memory device is configured to perform a double memory access in response to a single edge of the clock signal. A first internal clock pulse for a first access of the double memory access and a second internal clock pulse for a second access of the double memory access are generated in response to the single edge of the clock signal. The global control circuitry generates a comparison signal in dependence on a comparison between a first bank indicated by the first access and a second bank indicated by the second access, and local bank control circuitry of the second bank is configured to generate the second internal clock pulse in dependence on the comparison signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.