Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems
US9627239B2 · kind B2 · utility
3Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | May 29, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Jun 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67259
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.