Method for fabricating semiconductor device
US9627268B2 · kind B2 · utility
5Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Oct 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.