Image sensor device and method for forming the same
US9627426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.