Patent · US Active

Image sensor device and method for forming the same

US9627426B2 · kind B2 · utility

3Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 2014
Grant dateApr 18, 2017
Priority date
Expiry dateFeb 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8063

Abstract

Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.