Semiconductor MOS device having a dense oxide film on a spacer
US9627534B1 · kind B1 · utility
0Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, an ILD layer on the semiconductor substrate, a gate in the ILD layer, an offset liner on a sidewall of the gate, a spacer on the offset liner, a dense oxide film on the spacer, a contact etch stop layer on the dense oxide film, and a contact plug adjacent to the contact etch stop layer. The semiconductor device further includes a source region in the semiconductor substrate and a drain region spaced apart from the source region. A channel is located between the source region and the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.