Fin field effect transistor and method of manufacturing the same
US9627538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Oct 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET includes a substrate having a top surface and an insulation. At least a recessed fin is extended upwardly from the top surface of the substrate, and at least a gate stack is formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack. The insulation includes a lateral portion adjacent to the recessed fin, and a central portion contiguous to the lateral portion, wherein a top surface of the lateral portion is higher than a top surface of the central portion. A top surface of the recessed fin is lower than the top surface of the central portion of the insulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.