Semiconductor transistor device and method for fabricating the same
US9627549B1 · kind B1 · utility
2Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Oct 5, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Nov 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.