Chemical mechanical polishing pad composite polishing layer formulation

US9630293B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Bainian Qian · Newark, US
• Julia Kozhukh · Cambridge, US
• Teresa Brugarolas Brufau · Philadelphia, US
• Diego Lugo · Newark, US
• George C. Jacob · Newark, US
• Jeffrey B. Miller · Brookline, US
• Tony Quan Tran · Bear, US
• Marc R. Stack · Middletown, US
• Jeffrey James Hendron · Elkton, US

Key dates

• Filing date: Jun 26, 2015
• Grant date: Apr 25, 2017
• Expiry date: Jun 26, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.