Method for deriving characteristic values of MOS transistor
US9632115B2 · kind B2 · utility
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Key dates
| Filing date | May 14, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for deriving characteristic values of a MOS transistor is described. A set of ηk values is provided. A set of VBi values (i=1 to M, M≧3) is provided. A set of RSDi,j (i=1 to M−1, j=i+1 to M) values each under a pair of VBi and VBj, or a set of Vtq_q,j (q is one of 1 to M, j is 1 to M excluding q) values under VBq is derived for each ηk, with an iteration method. The ηk value making the set of RSDi,j values or Vtq_q,j values closest to each other is determined as an accurate ηk value. The mean value of RSDi,j at the accurate ηk value is calculated as an accurate RSD value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.