Masking methods for ALD processes for electrode-based devices
US9633850B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1205
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.