Ritwik Bhatia
9Patents
4h-index
14Co-inventors
50Inventor score
Filing activity: Aug 2, 2005 → May 18, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7501355B2 | Decreasing the etch rate of silicon nitride by carbon addition | Electricity | 465 | Active |
| US9929011B2 | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | Performing Operations; Transporting | 447 | Active |
| US7132353B1 | Boron diffusion barrier by nitrogen incorporation in spacer dielectrics | Electricity | 62 | Expired |
| US7737052B2 | Advanced multilayer dielectric cap with improved mechanical and electrical properties | Electricity | 20 | Active |
| US7951730B2 | Decreasing the etch rate of silicon nitride by carbon addition | Electricity | 3 | Active |
| US10090153B2 | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | Performing Operations; Transporting | 1 | Active |
| US9768016B2 | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | Performing Operations; Transporting | 0 | Active |
| US9691613B2 | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | General | 0 | Revoked |
| US9633850B2 | Masking methods for ALD processes for electrode-based devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.