Method for manufacturing semiconductor device
US9633901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jul 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a first semiconductor element and a second semiconductor element in a semiconductor wafer. The first semiconductor element includes a first electrode formed on a front surface of the semiconductor wafer. The second semiconductor element is adjacent to the first semiconductor element and includes a second electrode formed on the front surface. The method further includes forming a first insulating layer on the front surface located at a first boundary portion between the first electrode and the second electrode; applying a specific potential different from a potential of the second electrode on the first electrode after the formation of the first insulating layer; and cutting the semiconductor wafer at the first boundary portion so as to divide the first semiconductor element from the second semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.