Method for manufacturing semiconductor device with epitaxial structure
US9633904B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2016 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Nov 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device with epitaxial structure includes following steps: A substrate including a plurality of gate structures formed thereon is provided, and a spacer is respectively formed on sidewalls of each gate structure. Next, a first etching process is performed to form a first recess respectively at two sides of the gate structures and followed by performing an ion implantation to the first recesses. After the ion implantation, a second etching process is performed to widen the first recesses to form widened first recesses and to form a second recess respectively at a bottom of each widened first recess. Then, an epitaxial structure is respectively formed in the widened first recesses and the second recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.