Methods of forming FinFET devices with substantially undoped channel regions

US9634143B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jeremy A. Wahl · Delmar, US
• Ryan Sporer · Mechanicville, US

Key dates

• Filing date: Jul 21, 2016
• Grant date: Apr 25, 2017
• Expiry date: Jul 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

One disclosed method includes forming a fin in a substrate by etching a plurality of fin-formation trenches, forming a layer of insulating material in the trenches, performing a densification anneal process on the layer of insulating material and, after performing the densification anneal process, performing at least one ion implantation process to form a counter-doped well region in the fin. The method also includes forming an undoped semiconductor material on an exposed upper surface of the fin, recessing the insulating material so as to expose at least a portion of the undoped semiconductor material and forming a gate structure around the exposed portion of the undoped semiconductor material.