Method of forming a composite substrate

US9634181B2 · kind B2 · utility

Assignee

• KONINIKLIJKE PHILIPS N.V. · NL

Inventors

• Nathan Gardner · Provo, US
• Melvin McLaurin · Midland School, US
• Michael Jason Grundmann · San Jose, US
• Werner Goetz · Palo Alto, US
• John E. Epler · San Jose, US
• Qi Ye · San Diego, US

Key dates

• Filing date: Oct 26, 2011
• Grant date: Apr 25, 2017
• Expiry date: Sep 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate−a layer|)/asubstrate]*100% is no more than 1%.