Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
US9634237B2 · kind B2 · utility
45Cited by
5References
5Claims
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Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Dec 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.