Plasma source for a focused ion beam system
US9640367B2 · kind B2 · utility
10Cited by
28References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0815
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.