Spin-on spacer materials for double- and triple-patterning lithography
US9640396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | May 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.