Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression
US9640533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Mar 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins. A portion of the lateral over-growth of epitaxial layer on the outer walls of the first and second outer fins is suppressed by the spacer nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.