FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the same
US9640661B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | May 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a fin-shaped structure is formed on the substrate. Next, a gate structure is formed on the fin-shaped structure, and an epitaxial layer is formed adjacent to the gate structure. Preferably, the epitaxial layer includes a V-shaped profile viewing from the top. According to the preferred embodiment of the present invention, the V-shaped profile of the epitaxial layer allows more stress to be applied to the region having concentrated currents or edges of the fin-shaped structures during an on-state, and at the same time prevent exerting too much stress to the region having high currents or central region of the fin-shaped structure during an off-state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.