Double self-aligned phase change memory device structure
US9640757B2 · kind B2 · utility
8Cited by
103References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2013 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A double self-aligned phase change memory device structure, comprising spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. Also described are various methods of making such phase change memory device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.