Critical dimension control in photo-sensitized chemically-amplified resist
US9645495B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Resist compositions for photosensitive chemically amplified resist processing, as well as methods for processing substrates using a photosensitive chemically amplified resist are disclosed for improved CD uniformity. A resist composition or layer generates photosensitizer when the resist is exposed to a first wavelength of light. A second wavelength of light is later used to amplify an acid reaction. The radiation-sensitive layer also includes a photo-active agent that, when exposed to a third light wavelength, modifies a concentration of photosensitizer in the radiation-sensitive layer. The third light wavelength can be projected as a pattern of radiation using a digital pixel-based projection system, with the projected pattern based on a critical dimension signature. In a subsequent exposure step, the resist layer is exposed to light of the second wavelength that induces or amplifies the acid concentration within the photoresist film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.