Method for smoothing surface of a substrate containing gallium and nitrogen
US9646827B1 · kind B1 · utility
2Cited by
67References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2012 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.