Resistive random access memory device with resistance-based storage element and method of fabricating same
US9647037B2 · kind B2 · utility
3Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.