Thermionically-overdriven tunnel FETs and methods of fabricating the same
US9647098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A field effect transistor (FET) includes a nanosheet stack having first and second stacked semiconductor channel layers. The first channel layer defines a channel region of a tunnel FET, and the second channel layer defines a channel region of a thermionic FET. Source and drain regions are provided on opposite sides of the nanosheet stack such that the first and second channel layers extend therebetween. A first portion of the source region adjacent the first channel layer and a second portion of the source region adjacent the second channel layer have opposite semiconductor conductivity types. Related fabrication and operating methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.