Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9647114B2 · kind B2 · utility
462Cited by
670References
11Claims
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Key dates
| Filing date | Aug 14, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.