Resistive random access memory (RRAM) structure

US9647207B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hai-Dang Trinh · Hsinchu, TW
• Chia-Shiung Tsai · Jinshanmian, TW
• Chin-Wei Liang · Hengshan, TW
• Cheng-Yuan Tsai · Taipei, TW
• Hsing-Lien Lin · Hsinchu, TW
• Chin-Chieh Yang · New Taipei, TW
• Wen-Ting Chu

Key dates

• Filing date: Jan 26, 2015
• Grant date: May 9, 2017
• Expiry date: May 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory (RRAM) cell with a high κ layer based on a group-V oxide and hafnium oxide is provided. The RRAM cell includes a bottom electrode layer, a group-V oxide layer arranged over the bottom electrode layer, and a hafnium oxide based layer arranged over and abutting the group-V oxide layer. The RRAM cell further includes a capping layer arranged over and abutting the hafnium oxide based layer, and a top electrode layer arranged over the capping layer. A method for manufacturing the RRAM cell is also provided.