Method for removing native oxide and residue from a III-V group containing surface
US9653291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.