Method for processing a semiconductor device and semiconductor device

US9653296B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Andreas Haertl · Munich, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Andre Rainer Stegner · Unterhaching, DE
• Daniel Schloegl · Villach, AT

Key dates

• Filing date: May 22, 2014
• Grant date: May 16, 2017
• Expiry date: May 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28537
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.