Methods for selective etching of a silicon material
US9653310B1 · kind B1 · utility
2Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Dec 7, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.