On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges

US9653476B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA

Inventors

• Claire Fenouillet-Beranger · Grenoble, FR
• Pascal Fonteneau · Theys, FR

Key dates

• Filing date: Jul 2, 2013
• Grant date: May 16, 2017
• Expiry date: Sep 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An integrated circuit includes a transistor, an UTBOX buried insulating layer disposed under it and a ground plane disposed under the layer. A well is disposed under the plane and a first trench is at the periphery of the transistor and extends through the layer into the well. There is a substrate under the well and a p-n diode on a side of the transistor. The diode comprises first and second zones of opposite doping and the first zone is configured for electrical connection to a first electrode of the transistor. The first and second zones are coplanar with the plane and a second trench for separating the first and second zones. The second trench extends through the layer into the plane to a depth less than an interface between the plane and the well. There is a third zone under the second trench forming a junction between the zones.