Doping control of metal nitride films
US9659814B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jan 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.